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110 / IRFD110 hexfet power mosfet


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* Repetitive Avalanche Rated
* 175 degree C Operating Temperature
Third generation HeXFET from IR provide the designer with the best combination of fast switching, ruggedized device design, low-on-resistance and cost-effectiveness.
The 4 pin dip package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard .1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.



110 / IRFD110 hexfet power mosfet